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 1996 Mar 19 4 Philips Semiconductors Product speci?cation Schottky barrier (double) diodes BAT54W series GRAPHICAL DATA 3 handbook, halfpage10 IF VF (V) 102 (mA) 10 1 10 1 0 1.2 0.8 0.4 MSA892 (3) (2) (1) (1) (2) (3) (1) Tamb = 125 °C. (2) Tamb =85°C. (3) Tamb =25°C. Fig.6 Forward current as a function of forward voltage; typical values. 0102030V (V)R 10 3 IR (μA) 10 2 10 1 10 1 (1) (2) (3) MSA893 (1) Tamb = 125 °C. (2) Tamb =85°C. (3) Tamb =25°C. Fig.7 Reverse current as a function of reverse voltage; typical values. 00102030 V (V)R 5 10 15 Cd (pF) MSA891 Fig.8 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb =25°C. Fig.9 Reverse recovery definitions. handbook, halfpageIF 90% 10% t tf Qr dIF dt IR MRC129 - 1 |